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1.  A storage element comprising a layer structure, the layer structure including:
   a storage layer including magnetization perpendicular to the film surface, in which the direction of magnetization is changed corresponding to information;
   a magnetization fixing layer including magnetization perpendicular to the film surface that becomes a reference for information stored on the storage layer;
   a tunnel barrier layer made from an oxide provided between the storage layer and the magnetization fixing layer; and
   a spin barrier layer made from an oxide provided contacting the surface of the opposite side of the storage layer to the surface contacting the tunnel barrier layer,

9.  The storage element according to claim 8,
   wherein an electrode layer configured to have a plurality of layers including a first electrode layer and a second electrode layer in which different materials are stacked in order from the spin barrier layer side is provided on the surface side of the spin barrier layer opposite to the surface that contacts the storage layer,
   wherein the second electrode layer is made from a material with a higher reactivity to an oxide than the first electrode layer, and
   wherein the low resistance region is formed by an oxide in a partial region in the spin barrier layer being reduced by a portion of the second electrode layer contacting or approaching the spin barrier layer by passing through or entering the first electrode layer in the film thickness direction.

1.一存储元件，包括一层结构，该层结构包括：
一存储层,该层包含垂直于薄膜表面磁化，其中磁化方向相应于信息而变化；
一磁化固定层，它包含垂直于薄膜表面的磁化，该磁化成为存储在存储层的信息的参照；
一隧道阻挡层，它由一提供在存储层和磁化固定层之间的氧化物制得；
一自旋阻挡层，它由提供的氧化物制得，该层将存储层对面的表面与和隧道阻挡层接触的表面联系起来。

9.根据权利要求8所述的存贮元件，其中，在自旋阻挡层的表面侧上提供构型成具有多层的电极层，该自旋阻挡层对着与存储层接触的表面，该多层含有第一电极层和第二电极层，其中，不同材料自自旋阻挡层侧顺序堆叠。
  其中，第二电极层用比第一电极层具有更高的氧化物活性材料制得，
  其中，在自旋阻挡层的局部区域由氧化物形成低阻区域，该自旋阻挡层通过在薄膜厚度方向穿过或进入第一电极层被减少了与自旋阻挡层接触或靠近的第二电极层的一部分。